In2s3禁带宽度
WebJul 15, 2010 · In2S3−xSex and (In2S3)x(In2O3)y thin films have been prepared on glass substrates using appropriate heat treatments of In evaporated thin films. X-ray analysis shows that In thin films which ... WebIndium(III) sulfide (Indium sesquisulfide, Indium sulfide (2:3), Indium (3+) sulfide) is the inorganic compound with the formula In 2 S 3.. It has a "rotten egg" odor characteristic of sulfur compounds, and produces hydrogen sulfide gas when reacted with mineral acids.
In2s3禁带宽度
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WebSep 14, 2016 · Elegant Z-scheme WO3/Au/In2S3 nanowire arrays were precisely constructed through a facile step-by-step route. Surface potential change on pristine or In2S3-Au coated WO3 single nanowire under dark and illumination detected through a Kelvin probe force microscopy (KPFM) technique indicates that the vectorial holes transfer of In2S3 → Au → … WebIn lithium-ion batteries (LIBs), the In 2 S 3 /C nanofiber electrode can not only deliver a high initial reversible specific capacity of 696.4 mA h g −1 at 50 mA g −1, but also shows ultra …
WebThe films have been examined to evaluate the structural and optical properties. X-ray diffraction spectra have revealed the presence of both the α-In2S3 (cubic) and β-In2S3 (tetragonal) phases ... WebJul 28, 2024 · The optimized In2S3–MoS2 nanohybrids can decompose 97.67% of MB and 76.3% of OTC-HCl molecules solution in 8 min and 40 min of exposure of sunlight respectively. 2D-layered In2S3-MoS2 ...
WebSep 14, 2016 · Surface potential change on pristine or In2S3-Au coated WO3 single nanowire under dark and illumination detected through a Kelvin probe force microscopy (KPFM) … WebApr 6, 2024 · znins2禁带宽度为3.6~3.8eV。. ZnS是一种直接带隙的半导体材料,具有闪锌矿和纤锌矿两种结构。. 它具有良好的光电性能,广泛应用于各种光学和光电器件中,如 …
WebDec 24, 2015 · Closely to In2S3 composition is located In3S4 phase with spinel structure. The width of the optical band gap for the indirect transition is about 1.55 eV and 1.61 eV …
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